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2SK1880(L), 2SK1880(S)
Silicon N Channel MOS FET
REJ03G0983-0200 (Previous: ADE-208-1331) Rev.2.00 Sep 07, 2005
Application
High speed power switching
Features
* * * * Low on-resistance High speed switching No secondary breakdown Suitable for switching regulator
Outline
RENESAS Package code: PRSS0004ZD-A (Package name: DPAK(L)-(1))
4 D 4 G 1. Gate 2. Drain 3. Source 4. Drain S 1 2 3
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S))
1
2
3
Rev.2.00 Sep 07, 2005 page 1 of 7
2SK1880(L), 2SK1880(S)
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS ID ID(pulse)* IDR Pch* Tch
2 1
Ratings 600 30 1.5 3.0 1.5 20 150 -55 to +150
Unit V V A A A W
Tstg
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse Test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 600 30 -- -- 2.0 -- 0.85 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 6.5 1.4 250 55 8 10 25 35 30 0.95 350 Max -- -- 10 100 3.0 8.0 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V s Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 500 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 1 A, VGS = 10 V* ID = 1 A, VDS = 20 V* VDS = 10 V, VGS = 0, f = 1 MHz ID = 1 A, VGS = 10 V, RL = 30
3
3
IF = 1.5 A, VGS = 0 IF = 1.5 A, VGS = 0, diF/dt = 100 A/s
Rev.2.00 Sep 07, 2005 page 2 of 7
2SK1880(L), 2SK1880(S)
Main Characteristics
Power vs. Temperature Derating
30 10
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current ID (A)
3 1
O a pe by rea rat R is ion li i D S ( mi n t on ted his )
1
10
10
0 s
s
PW
20
DC
m
s
0.3 0.1 0.03
10
O pe ra tio n
= 10
s m (1 sh ot )
= 25 C ) (T c
Ta = 25C
0.3 1 3 10 300 1000
0
50
100
150
0.01 0.1
Case Temperature TC (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
2.0
Typical Transfer Characteristics 2.0
Drain Current ID (A)
5V
Drain Current ID (A)
1.6 1.2 0.8 0.4
Pulse Test 4.5 V
10 V
1.6 1.2 0.8 0.4
Pulse Test VDS = 20 V
4V
VGS = 3.5 V
75C Tc = 25C -25C
0
10
20
30
40
50
0
2
4
6
8
10
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
20
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
100 50
Drain to Source Saturation Voltage VDS (on) (V)
Pulse Test
16 12 8 4
Static Drain to Source on State Resistance RDS (on) ()
Pulse Test
I D = 1.5 A
20 10 5
VGS = 10 V
1A 0.5 A
2 1 0.05 0.1 0.2 0.5 1 2 5
0
4
8
12
16
20
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 7
2SK1880(L), 2SK1880(S)
Static Drain to Source on State Resistance vs. Temperature
20 16 12
Static Drain to Source on State Resistance RDS (on) ()
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance yfs (S)
5 2 1 0.5
Pulse Test V DS = 20 V Tc = -25C
ID = 1 A
8
75C
0.2 0.1 0.05 0.02
0.5 A
4
25C
-40
0
40
80
120
160
0.05 0.1
0.2
0.5
1
2
Case Temperature TC (C) Body to Drain Diode Reverse Recovery Time
Reverse Recovery Time t rr (ns)
5000 2000 1000 500 200 100 50 0.1 1 0.2 0.5 1 2 5 10 0 10 1000
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
Capacitance C (pF)
di/dt = 100 A/s VGS = 0 Ta = 25C Pulse Test
Ciss
100
VGS = 0 f = 1 MHz
Coss
10
Crss
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)
500 1000 20
Switching Characteristics
VGS = 10 V, VDD = 30 V PW = 2 s, duty 1 %
800 600 400 200
16
VDD = 100 V 250 V 400 V VDS VDD = 100 V 250 V 400 V
4 8 12 16
Switching Time t (ns)
I D = 1.5 A
VGS
200 100 50 tf 20 10 5 0.1 tr td(on) td(off)
12 8 4 0 20
0
0.2
0.5
1
2
5
10
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 7
2SK1880(L), 2SK1880(S)
Reverse Drain Current vs. Source to Drain Voltage
Reverse Drain Current IDR (A)
2.0
Pulse Test
1.6 1.2 0.8 0.4
VGS = 10 V 0 V, -5 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance S (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1 Tc = 25C
1.0
0.5
0.3 0.1
0.2 0.1 0.05 0.02
1s hot Pul se
ch - c(t) = s(t)* ch - c ch - c = 6.25C / W. Tc = 25C PW D= T P DM T PW
0.03 0.01 10
0.01
100
1m
10 m
100 m
1
10
Pulse Width PW (S)
Rev.2.00 Sep 07, 2005 page 5 of 7
2SK1880(L), 2SK1880(S)
Package Dimensions
JEITA Package Code
RENESAS Code
PRSS0004ZD-A
Package Name DPAK(L)-(1) / DPAK(L)-(1)V
MASS[Typ.] 0.42g
Unit: mm
6.5 0.5 5.4 0.5
1.7 0.5
2.3 0.2 0.55 0.1
5.5 0.5
1.2 0.3
3.1 0.5
1.15 0.1 0.8 0.1
16.2 0.5
2.29 0.5
2.29 0.5
0.55 0.1
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZD-C
Package Name DPAK(S) / DPAK(S)V
MASS[Typ.] 0.28g
Unit: mm
1.5 0.5
6.5 0.5 5.4 0.5
(0.1) (0.1)
2.3 0.2 0.55 0.1
(5.1)
5.5 0.5
1.2 Max
0 - 0.25
(1.2)
2.5 0.5
1.0 Max. 2.29 0.5
0.8 0.1 2.29 0.5
0.55 0.1
Rev.2.00 Sep 07, 2005 page 6 of 7
(5.1)
2SK1880(L), 2SK1880(S)
Ordering Information
Part Name 2SK1880L-E 2SK1880STL-E 3200 pcs 3000 pcs Quantity Box (Sack) Taping Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
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